N-Type SiC Substrate
SiC substrate is an indispensable and important material to support the electronic and electric power industry, with excellent characteristics of band gap, drift speed, breakdown voltage, thermal conductivity, high temperature resistance and so on, which is several times higher than the traditional silicon. It has irreplaceable advantages in high temperature, high voltage, high frequency, high power, photoelectricity, anti-radiation, microwavability and other electronic applications and extreme environment applications such as aerospace, military, nuclear energy and so on.
We constantly pursues higher crystal quality and processing quality to meet customer needs, and can currently supply 4-8 inch N type products in bulk supply.
Parameter Unit Specification Value Remark Grade - Production+ Grade Research Grade Dummy Grade - Diameter mm 150+0/-0.2 150+0/-0.2 150+0/-0.5 - Thickness μm 500±15 500±15 500±25 - Polytype - 4H-SiC 4H-SiC 4H-SiC - Surface Orientation - <0001>±0.2° <0001>±0.2° <0001>±0.5° - TTV μm ≤7 ≤8 ≤15 - BOW μm 0±15 0±20 0±30 - Warp μm ≤25 ≤30 ≤45 - Surface Roughness nm C-face:mirror polished,Ra<3.0
Si-face: CMP,Ra<0.2C-face:mirror polished,Ra<3.0
Si-face: CMP,Ra<0.2C-face:mirror polished,Ra<3.0
Si-face: CMP,Ra<0.2AFM@5μm*5μm Packaging: unit-ingot cassette/vacuum packaging.
*Research & Dummy Grade is also available. Please consult to our sales.
